february 2011 FDB8132_f085 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB8132_f085 rev. c1 www.fairchildsemi.com 1 FDB8132_f085 n-channel powertrench ? mosfet 30v, 80a, 1.6 m features ? typ r ds(on) = 1.4m at v gs = 10v, i d = 80a ? typ q g(10) = 209nc at v gs = 10v ? typ q g(10) = 269nc at v gs = 13v ? low miller charge ? low q rr body diode ? uis capability (single pulse and repetitive pulse) ? qualified to aec q101 ? rohs compliant applications ? 12v automotive load control ? starter/alternator systems ? electronic power steering s ystems ? dc/dc converter to-263ab fdb series
FDB8132_f085 n-channel powertrench ? mosfet FDB8132_f085 rev. c1 www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current continuous (t c < 167 o c, v gs = 10v) 80 a pulsed see figure 4 e as single pulse avalanche energy (note 1) 1904 mj p d power dissipation 341 w derate above 25 o c2.3w/ o c t j , t stg operating and storage temperature -55 to +175 o c r jc maximum thermal resistance junction to case 0.44 o c/w r ja maximum thermal resistance junction to ambient to-263,1in 2 copper pad area 43 o c/w package marking and ordering information device marking device package reel size tape width quantity FDB8132 FDB8132_f085 to-263ab 330mm 24mm 800 units electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 - - v i dss zero gate voltage drain current v ds = 24v, v gs = 0v - - 1 a t j = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.84v r ds(on) drain to source on resistance i d = 80a, v gs = 10v - 1.4 1.6 m i d = 80a, v gs = 10v, t j = 175c - 2.3 2.7 m c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 14100 - pf c oss output capacitance - 2135 - pf c rss reverse transfer capacitance - 1400 - pf rg gate resistance f = 1mhz - 1.4 - q g(tot) total gate charge at 13v v gs = 0 to 13v v dd = 15v i d = 80a - 269 350 nc q g(10) gate charge at 10v v gs = 0 to 10v - 209 272 nc q g(th) threshold gate charge v gs = 0 to 2v - 22 29 nc q gs gate to source gate charge -50-nc q gs2 gate charge threshold to plateau - 28 - nc q gd gate to drain ?miller? charge - 46 - nc
FDB8132_f085 n-channel powertrench ? mosfet FDB8132_f085 rev. c1 www.fairchildsemi.com 3 electrical characteristics t j = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: starting t j = 25 o c, l = 0.93mh, i as = 64a symbol parameter test conditions min typ max units t on turn-on time v dd = 15v, i d = 80a, v gs = 5v, r gs = 2 - - 80 ns t d(on) turn-on delay time - 20 - ns t r turn-on rise time - 29 - ns t d(off) turn-off delay time - 79 - ns t f turn-off fall time - 30 - ns t off turn-off time - - 173 ns v sd source to drain diode voltage i sd = 80a - 0.9 1.25 v i sd = 40a - 0.8 1.0 v t rr reverse recovery time i f = 80a, di sd /dt = 100a/ s -5369ns q rr reverse recovery charge - 54 71 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification.
FDB8132_f085 n-channel powertrench ? mosfet FDB8132_f085 rev. c1 www.fairchildsemi.com 4 typical characteristics figure 1. normalized power dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 400 current limited by package v gs = 10v i d , drain current (a) t c , case temperature ( o c ) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 11 0 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) transconductance may limit current in this region t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
FDB8132_f085 n-channel powertrench ? mosfet FDB8132_f085 rev. c1 www.fairchildsemi.com 5 figure 5. 11 05 0 0.1 1 10 100 1000 5000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1000 10000 1 10 100 500 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 2345 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.00.51.01.52.0 0 40 80 120 160 v gs = 20v 10v 8v 7v 6v 5v 4.5v 4v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 9. 24681 0 0 2 4 6 8 10 i d = 80a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pulse duration = 80 p s duty cycle = 0.5% max i d = 80a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics
FDB8132_f085 n-channel powertrench ? mosfet FDB8132_f085 rev. c1 www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source br eakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.90 0.95 1.00 1.05 1.10 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c ) figure 13. 0.1 1 10 30 1000 10000 30000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 14. 0 60 120 180 240 0 2 4 6 8 10 i d = 80a v dd = 18v v dd = 12v v dd = 15v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
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